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dc.contributor.authorWalker, Nathan Thomas
dc.description.abstractWe analyze a toy model for p-n junction photovoltaic devices by simulating photoexcited state dynamics in silicon nanowires. One nanowire is approximately circular in cross section with a diameter of d = 1.17 nm. The other has an approximately rhombic cross-section with d1 = 1.16 nm and d2 = 1.71 nm. Both nanowires have been doped with aluminum and phosphorus atoms and capped with gold leads. We use Boltzmann transport equation (BE) that includes phonon emission, carrier multiplication (CM), and exciton transfer. BE rates are computed using non-equilibrium finite-temperature many-body perturbation theory (MBPT) based on Density Functional Theory (DFT) simulations, including excitonic effects from Bethe-Salpeter Equation. We compute total charge transfer amount generated from the initial photoexcitation and find an enhancement when CM is included. In particular, we see between 78% and 79% enhancement in the smaller wire, while we see 116% enhancement in the larger nanowireen_US
dc.publisherNorth Dakota State Universityen_US
dc.rightsNDSU policy 190.6.2en_US
dc.titleA Density Functional Theory and Many Body Perturbation Theory Based Study of Photo-Excited Charge Separation in Doped Silicon Nanowires with Gold Leads: Toy Models for the Photovoltaic Effecten_US
dc.typeThesisen_US
dc.date.accessioned2021-03-09T16:11:15Z
dc.date.available2021-03-09T16:11:15Z
dc.date.issued2020
dc.identifier.urihttps://hdl.handle.net/10365/31785
dc.subjectp-n junctionen_US
dc.subjectphotovoltaic effecten_US
dc.subjectsilicon nanowiresen_US
dc.rights.urihttps://www.ndsu.edu/fileadmin/policy/190.pdfen_US
ndsu.degreeMaster of Science (MS)en_US
ndsu.collegeScience and Mathematicsen_US
ndsu.departmentPhysicsen_US
ndsu.programPhysicsen_US
ndsu.advisorKryjevski, Andrei


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