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dc.contributor.authorZhuang, Xing
dc.description.abstractA reliability prediction method is proposed to determine the lifetime of IGBTs (Insulated Gate Bipolar Transistors) under power cycling test based on the performance of solder joint and wire bond. The failure characteristics of solder joint and wire bond are captured via selected PoF model respectively. To provide precise reliability prediction, PoF models are converted into probabilistic models. In addition, the failure interaction between wire bond and solder joint is studied. Wire bond lift-off is treated as the predominant failure mode based upon experiments from literature and solder joint degradation process is triggered by wire bond degradation process. Increased junction temperature is captured as it is affected by the degradation process of both components. In the end, the system reliability is computed in a series system configuration.en_US
dc.publisherNorth Dakota State Universityen_US
dc.rightsNDSU Policy 190.6.2
dc.titleA New Reliability Assessment Model for Power Electronic Modules Considering Failure Mechanism Interactionen_US
dc.typeThesisen_US
dc.date.accessioned2018-02-26T18:34:00Z
dc.date.available2018-02-26T18:34:00Z
dc.date.issued2015
dc.identifier.urihttps://hdl.handle.net/10365/27615
dc.rights.urihttps://www.ndsu.edu/fileadmin/policy/190.pdf
ndsu.degreeMaster of Science (MS)en_US
ndsu.collegeEngineeringen_US
ndsu.departmentIndustrial and Manufacturing Engineeringen_US
ndsu.programIndustrial Engineering and Managementen_US
ndsu.advisorYadav, Om Prakash


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